power mosfets 1 publication date: february 2004 sjg00035aed 2sK3637 silicon n-channel power mosfet for pdp/for high-speed switching features ? low on-resistance, low q g ? high avalanche resistance absolute maximum ratings t c = 25 c 1: gate 2: drain 3: source top-3e-a1 package unit: mm parameter symbol conditions min typ max unit gate-drain surrender voltage v dss i d = 1 ma, v gs = 0 200 v diode forward voltage v dsf i dr = 50 a, v gs = 0 ? 1.5 v gate threshold voltage v th v ds = 25 v, i d = 10 ma 2 4 v drain-source cutoff current i dss v ds = 160 v, v gs = 0 100 a gate-source cutoff currentt i gss v gs = 30 v, v ds = 0 1 a drain-source on resistance r ds(on) v gs = 10 v, i d = 25 a 29 40 m ? forward transfer admittance ? y fs ? v ds = 25 v, i d = 25 a 15 30 s short-circuit forward transfer capacitance c iss v ds = 25 v, v gs = 0, f = 1 mhz 4 550 pf (common-source) short-circuit output capacitance c oss 750 pf (common-source) reverse transfer capacitance c rss 75 pf (common-source) turn-on delay time t d(on) v dd = 100 v, i d = 25 a 50 ns rise time t r r l = 4 ? , v gs = 10 v 125 ns turn-off delay time t d(off) 390 ns fall time t f 140 ns reverse recovery time t rr l = 230 h, v dd = 100 v 210 ns reverse recovery charge q rr i dr = 25 a, di /dt = 100 a/ s 820 nc 15.5 0.5 3.0 0.3 (4.0) 2.0 0.2 1.1 0.1 5.45 0.3 0.7 0.1 5? 5? 5? 5? 5? 10.9 0.5 1 5? 23 (10.0) (1.2) (2.0) solder dip 3.3 0.3 5.5 0.3 (2.0) 26.5 0.5 (23.4) 22.0 0.5 18.6 0.5 (2.0) 3.2 0.1 (4.5) electrical characteristics t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol rating unit drain-source surrender voltage v dss 200 v gate-source surrender voltage v gss 30 v drain current i d 50 a peak drain current i dp 200 a avalanche energy capability * eas 2 000 mj power p d 100 w dissipation t a = 25 c3 channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c internal connection g s d note) * :l = 0.8 mh, i l = 50 a, v dd = 100 v, 1 pulse, t a = 25 c
2sK3637 2 sjg00035aed safe operation area parameter symbol conditions min typ max unit total gate charge q g v dd = 100 v, i d = 25 a 85 nc gate-source charge q gs v gs = 10 v 30 nc gate-drain charge q gd 12 nc channel-case heat resistance r th(ch-c) 1.25 c/w channel-atmosphere heat resistance r th(ch-a) 41.6 c/w electrical characteristics (continued) t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 11010 2 10 3 10 ? 1 1 10 10 2 10 3 non repetitive pulse t c = 25 c drain current i d ( a ) drain-source voltage v ds ( v ) i d i dp t = 100 s 10 ms 1 ms dc 100 ms
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